Multi-discharge EDM coring of single crystal SiC ingot by electrostatic induction feeding method

A new technique of EDM coring of single crystal silicon carbide (SiC) ingot was proposed in this paper. Currently single crystal SiC devices are still of high cost due to the high cost of bulk crystal SiC material and the difficulty in the fabrication process of SiC. In the manufacturing process of SiC ingot/wafer, localized cracks or defects occasionally occur due to thermal or mechanical causes resulted from fabrication processes which may waste the whole piece of material. To save the part of ingot without defects and maximize the material utilization, the authors proposed EDM coring method to cut out a no defect ingot from a larger diameter ingot which has localized defects. A special experimental setup was developed for EDM coring of SiC ingot in this study and its feasibility and machining performance were investigated. Meanwhile, in order to improve the machining rate, a novel multi-discharge EDM coring method by electrostatic induction feeding was established, which can realize multiple discharges in single pulse duration. Experimental results make it clear that EDM coring of SiC ingot can be carried out stably using the developed experimental setup. Taking advantage of the newly developed multi-discharge EDM method, both the machining speed and surface integrity can be improved.     

Sidle的远程执行设备

Ｓｉｄｌｅ系统是运行在ＳＵＮ工作站网络上的一组实用程序，利用空闲的处理机资源进行大粒度的并行计算．同其它远程执行设备相比，它能支持程序内部并行和嵌套的远程执行，允许一个服务员机接受多个远程执行任务．本文介绍了这些特点和透明性的实现方法．     

企业施工定额的编制以及施工成本分析平台的应用

本文阐述了施工企业内部编制定额的必要性和成本分析平台的实用性,并根据多年的工作经验就建筑施工企业对施工成本的控制谈谈一自己的认识和看法.     

锡矿山重复水利用的措施及效果

本介绍了锡矿山前闪星锑业有限责任公司如何加强对关键耗水工序的管理及提高重复水利用率的措施，并对所取得的效果进行了阐述，可供用水大户如何节水以借鉴。     

一个有效的圆片规模布局算法

本文提出了一个圆片规模布局算法，它是国外一个相应算法的改进形式，区别在于利用力定向布局法的方式不同。在相对位置阶段，该算法利用布局的层次特性将需确定所有电路元件相对位置的问题缩减至仅需确定宏电路元件相对位置的问题；在实际位置阶段，采用分治策略和取消前阶段层次划分的方式回避了需确定任意元实际位置的问题．其时间复杂度远低于国外相应算法．     

硅片和硅器件工艺中的背面损伤吸除技术

本文介绍了硅片背面的三种主要损伤吸除技术：机械损伤、激光辐照和离子注入技术。对这三种吸除技术的机理、工艺条件、应用情况和近来进展，作了详细的评述。     

径流过程分维数与其主要影响因素的定量研究

为研究分维数与其主要影响因素的定量关系,收集泾河张家山水文站的径流资料和该流域长武、环县、崆峒气象站日降雨数据以及ＮＤＶＩ遥感影像,分别选取降水不均匀系数为代表降水年内分配不均匀程度的指标和ＮＤＶＩ为反映人类活动对流域植被覆盖影响的指标,经过归一化处理后,使用ＭＴＡＬＡＢ软件得出以年为单位的泾河径流过程分维数与该流域降水不均匀系数和ＮＤＶＩ的定量关系式。结果表明分维数与降水不均匀系数呈正相关（Ｒ＝０．５５７１）,而与ＮＤＶＩ呈负相关（Ｒ＝０．２２７８）。说明降水年内分配越不均匀,植被覆盖越小,径流过程越复杂,分维数就越大,符合平常认知;泾河流域的降水对径流过程的影响较流域植被覆盖更大。     

An experimental investigation into soft-pad grinding of wire-sawn silicon wafers

Silicon is the primary semiconductor material used to fabricate microchips. A series of processes are required to manufacture high-quality silicon wafers. Surface grinding is one of the processes used to flatten wire-sawn wafers. A major issue in grinding of wire-sawn wafers is reduction and elimination of wire-sawing induced waviness. Results of finite element analysis have shown that soft-pad grinding is very effective in reducing the waviness. This paper presents an experimental investigation into soft-pad grinding of wire-sawn silicon wafers. Wire-sawn wafers from a same silicon ingot were used for the study to ensure that these wafers have similar waviness. These wafers were ground using two different soft pads. As a comparison, some wafers were also ground on a rigid chuck. Effectiveness of soft-pad grinding in removing waviness has been clearly demonstrated.     

洞内淹没射流及水平旋流梯级内消能的适用性研究

为了适应高水头泄洪消能的需要,提出了一种新型的泄洪内消能工,即洞内淹没射流与水平旋流梯级内消能工。以流量1 200 m3/s、最大总作用水头150m为标准进行了该消能工的体型设计,然后对设计的消能工进行了1∶60.25几何比尺下的水工模型试验。结果表明:下游出现与明渠相似的多种水跃流态,淹没射流孔口系数0.5~0.56,起旋器喉口流量系数0.32~0.35之间;旋流空腔直径先增大后迅速减小最后平稳,在旋流阻塞孔口处空腔直径又迅速增大最后稳定;下游水位H下小于2.0 D时,下游旋流洞段压强相对变化幅度较小,H下大于2.0D时,上下游水位对旋流洞压强影响较大;上游水位的变化不影响淹没射流速度相对变化,下游水位的变化,对水平旋流洞段影响较大;上游淹没射流消能、竖井消能、旋流洞消能与下游旋流阻塞扩散消能的消能率分别占总消能率的15%、10%、30%、10%,其中下游水平旋流洞段承担主要消能部分。